Fabrication and characterization of Si nanotips utilizing anisotropic wet etching

Authors

  • D. V. Priyanka Central Manufacturing Technology Institute, Bengaluru, Karnataka, India
  • Megha Agrawal Central Manufacturing Technology Institute, Bengaluru, Karnataka, India

DOI:

https://doi.org/10.58368/MTT.23.5-6.2024.8-12

Keywords:

KOH, Si Nano Tips, Silicon, Wet Etching

Abstract

Nano tips are important structures for various applications such as topography measurement, Microfluidics, and microelectronics. There are different approaches to develop the silicon nano tips. In this study a simple, low cost and non toxic method to obtain nano tips using anisotropic wet etching is proposed, where 30% KOH (Potassium Hydroxide) was used as etchant with the addition of IPA (Isopropanol) to improve the surface roughness. The profile and topography of the fabricated nanotips were evaluated by SEM and Confocal microscopy. Anisotropic KOH wet etching is validated as simple, fast and inexpensive method to achieve nano pyramidal tips with 467.8 nm tip diameter with a tip height of 20 μm.

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References

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Published

01-05-2024

How to Cite

Priyanka, D. V., & Agrawal, M. (2024). Fabrication and characterization of Si nanotips utilizing anisotropic wet etching. Manufacturing Technology Today, 23(5-6), 8–12. https://doi.org/10.58368/MTT.23.5-6.2024.8-12